| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which reduces light absorption, a manufacturing method of the light emitting diode, a lamp, and a lighting device. <P>SOLUTION: A light emitting diode 100 includes: a compound semiconductor layer 10 including a light emitting layer 24 provided on a substrate 1; an ohmic contact electrode 7 which is provided between the substrate 1 and the compound semiconductor layer 10; an ohmic electrode 11 provided at a surface of the compound semiconductor layer 10 which is the opposite side of the substrate 1; a surface electrode 12 including a branch part 12b provided so as to cover a surface of the ohmic electrode 11 and a pad part 12a connecting with the branch part 12b; and a current interruption part 13 which is provided between a pad lower light emitting layer 24a disposed at a region of the light emitting layer 24, which overlaps with the pad 12a in a plain view, and the light emitting layer 24 disposed at a region excluding the region overlapping with the pad part 12a in the plain view, the current interruption part 13 which interrupts a current supplied to the pad lower light emitting layer 24a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
