发明名称 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition, which gives a rectangular profile of a fine pattern, exhibits favorable LWR (line width roughness) and MEF (mask error factor), and contains a polymer compound having an effect of improving pattern collapse resistance, and to provide a method for forming a pattern by using the positive resist composition. <P>SOLUTION: The positive resist composition comprises: (A) a resin containing a repeating unit (a1) including an acid-labile group, a repeating unit (a2) having a cyclic hydrocarbon group and including at least one of ester group, ether group, carbonate ester group and sulfonic acid ester group in the ring, and a repeating unit (a3) having an oxirane ring, and showing an improvement in the alkali solubility by an acid; (B) a photo-acid generator, and (C) a solvent. The obtained resist composition shows good line width roughness (LWR) and a favorable mask error factor (MEF), and gives high rectangularity even in a fine pattern, and superior pattern collapse resistance. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013092590(A) 申请公布日期 2013.05.16
申请号 JP20110233564 申请日期 2011.10.25
申请人 SHIN ETSU CHEM CO LTD 发明人 TANIGUCHI RYOSUKE;KOBAYASHI TOMOHIRO;HATAKEYAMA JUN;FUNATSU AKIYUKI;KANAYAMA MASAHIRO
分类号 G03F7/039;C08F220/12;G03F7/004;H01L21/027 主分类号 G03F7/039
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