发明名称 STACKED CMOS CHIPSET HAVING AN INSULATING LAYER AND A SECONDARY LAYER AND METHOD OF FORMING SAME
摘要 A chipset includes a sheet of glass, quartz or sapphire and a first wafer having at least one first circuit layer on a first side of a first substrate layer. The first wafer is connected to the sheet such that the at least one first circuit layer is located between the first substrate layer and the sheet. A second wafer having at least one second circuit layer on a first side of a second substrate layer is connected to the first substrate layer such that the at least one second circuit layer is located between the second substrate layer and the first substrate layer. Also a method of forming a chipset.
申请公布号 US2013120951(A1) 申请公布日期 2013.05.16
申请号 US201213356717 申请日期 2012.01.24
申请人 ZUO CHENGJIE;YUN CHANGHAN;PARK SANG-JUNE;LO CHI SHUN;VELEZ MARIO F.;KIM JONGHAE;QUALCOMM INCORPORATED 发明人 ZUO CHENGJIE;YUN CHANGHAN;PARK SANG-JUNE;LO CHI SHUN;VELEZ MARIO F.;KIM JONGHAE
分类号 H05K1/03;H01L21/58;H01L21/60;H05K7/06 主分类号 H05K1/03
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