发明名称 |
Analog Circuit And Semiconductor Device |
摘要 |
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
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申请公布号 |
US2013122963(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201313733291 |
申请日期 |
2013.01.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;HIROSE ATSUSHI;TSUBUKU MASASHI;NODA KOSEI |
分类号 |
H01L33/02;H04R1/02 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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