发明名称 Analog Circuit And Semiconductor Device
摘要 An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
申请公布号 US2013122963(A1) 申请公布日期 2013.05.16
申请号 US201313733291 申请日期 2013.01.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;HIROSE ATSUSHI;TSUBUKU MASASHI;NODA KOSEI
分类号 H01L33/02;H04R1/02 主分类号 H01L33/02
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