发明名称 |
Plating Process and Structure |
摘要 |
A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.
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申请公布号 |
US2013119382(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113297845 |
申请日期 |
2011.11.16 |
申请人 |
KAO CHIN-FU;HUANG CHENG-LIN;LIN JING-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KAO CHIN-FU;HUANG CHENG-LIN;LIN JING-CHENG |
分类号 |
H01L23/544;H01L21/28 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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