发明名称 Plating Process and Structure
摘要 A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.
申请公布号 US2013119382(A1) 申请公布日期 2013.05.16
申请号 US201113297845 申请日期 2011.11.16
申请人 KAO CHIN-FU;HUANG CHENG-LIN;LIN JING-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KAO CHIN-FU;HUANG CHENG-LIN;LIN JING-CHENG
分类号 H01L23/544;H01L21/28 主分类号 H01L23/544
代理机构 代理人
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