GRAPHENE TRANSISTOR HAVING AIR GAP, HYBRID TRANSISTOR HAVING THE SAME, AND METHODS OF FABRICATING THE SAME

摘要

A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.