发明名称 SEMICONDUCTOR DEVICE, X-RAY CAMERA, AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of having a large signal amplitude value and enlarging a range where an input-output relation operates linearly while preventing a signal writing time from becoming longer, and to provide a method of driving the same. <P>SOLUTION: In a semiconductor device having an amplification transistor and a bias transistor, a discharge transistor is provided to perform pre-discharge. Alternatively, in the semiconductor device having the amplification transistor and the bias transistor, a potential of a bias side power line connected to the bias transistor is approached to a potential of an amplification side power line connected to the amplification transistor to perform pre-discharge. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013093872(A) 申请公布日期 2013.05.16
申请号 JP20120276807 申请日期 2012.12.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KIMURA HAJIME
分类号 H04N5/374;H01L27/146;H04N5/378 主分类号 H04N5/374
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