| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent malfunction of a semiconductor device without actuating a parasitic element by inhibiting potential lowering of a semiconductor substrate with respect to potential of a deep semiconductor layer that composes a circuit element even when a negative current is supplied to the semiconductor device. <P>SOLUTION: A semiconductor device of an embodiment comprises: an n-type semiconductor substrate 3; a power element 1 formed on one surface of the semiconductor substrate 3 and supplying power to a load connected thereto; a circuit element 2 including at least a MOS transistor 2c having an n-type source/drain region; a p-type semiconductor layer 4 arranged independently from the power element 1 and the circuit element 2; and an external circuit connected to the semiconductor substrate 3 and the semiconductor layer 4. The external circuit includes: a power source; a resistive element connected to the power source at one end; and a diode with an anode electrode being connected to another end of the resistive element and a cathode electrode being GND grounded. The semiconductor layer 4 is connected to the other end of the resistive element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
