| 发明名称 |
METHOD FOR ANALYZING SEMICONDUCTOR SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To determine presence or absence of a DZ in a semiconductor substrate having the DZ thereon. <P>SOLUTION: The method for analyzing the semiconductor substrate includes: measuring a lifetime τ<SB POS="POST">11</SB>in a primary mode of a first sample of which a surface recombination rate has been adjusted to 1×10<SP POS="POST">4</SP>cm/sec or more, in a semiconductor substrate having a DZ thereon and an IG layer therein; determining a bulk lifetime τ<SB POS="POST">IG</SB>of the IG layer using the lifetime τ<SB POS="POST">11</SB>in the primary mode and the following formula; measuring a lifetime τ<SB POS="POST">12</SB>in a primary mode of a second sample of which a surface recombination rate has been adjusted to 1×10<SP POS="POST">2</SP>cm/sec or more with respect to the first sample; comparing the lifetime τ<SB POS="POST">12</SB>in the primary mode with the bulk lifetime τ<SB POS="POST">IG</SB>of the IG layer; and determining that the DZ has disappeared when a difference between the lifetime τ<SB POS="POST">12</SB>in the primary mode and the bulk lifetime τ<SB POS="POST">IG</SB>of the IG layer becomes 0. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013093434(A) |
申请公布日期 |
2013.05.16 |
| 申请号 |
JP20110234579 |
申请日期 |
2011.10.26 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SHINOHARA SOJI;HANAOKA KAZUYA;TSUYA HIDEKI |
| 分类号 |
H01L21/322;H01L21/02;H01L21/265;H01L21/66;H01L27/12 |
主分类号 |
H01L21/322 |
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