发明名称 REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND REFLECTIVE MASK
摘要 To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value gamma of the resist film for electron beam writing is 30 or less.
申请公布号 US2013122407(A1) 申请公布日期 2013.05.16
申请号 US201113812627 申请日期 2011.07.29
申请人 HASHIMOTO MASAHIRO;ONO KAZUNORI;TSUKAGOSHI KENTA;FUKUI TOORU;HOYA CORPORATION 发明人 HASHIMOTO MASAHIRO;ONO KAZUNORI;TSUKAGOSHI KENTA;FUKUI TOORU
分类号 G03F1/24 主分类号 G03F1/24
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