DBR LASER DIODE WITH PERIODICALLY MODULATED GRATING PHASE

摘要

A DBR laser diode is provided where the phase Phi of the wavelength selective grating is characterized by periodic phase jumps of period LambdaRhoMu and modulation depthJ and the phase jumps of the wavelength selective grating are arranged substantially symmetrically, antisymmetrically, or asymmetrically about a midpoint of the DBR section along an optical axis of the DBR laser diode. The length of the wavelength selective grating along the optical axis of propagation of the DBR laser diode is (i) between approximately (m+0.01 )LambdaPM and approximately (m+0.49)LambdaPM, when the phase distribution is substantially symmetric with respect to the midpoint of the DBR section, (ii) between approximately (m-0.49)LambdaPM and approximately (m-0.01 )LambdaPM when the phase distribution is substantially antisymmetric with respect to the midpoint of the DBR section, and (iii) between approximately (m+0.6)LambdaPM and approximately (m+0.9) LambdaRhoMu when the phase distribution is substantially asymmetric with respect to the midpoint of the DBR section.