| 摘要 |
<p>A semiconductor voltage transformation structure is provided. The semiconductor voltage transformation structure comprises: a first electrode layer (100); an electricity-to-light conversion layer (102) formed on the first electrode layer (100); a second electrode layer (104) formed on the electricity-to-light conversion layer (102); a first isolation layer (106) formed on the second electrode layer (104); a third electrode layer formed (108) on the first isolation layer (106); a light-to-electricity conversion layer (110) formed on the third electrode layer (108); and a fourth electrode layer ( 112 ) formed on the light-to-electricity conversion layer (110), in which the first isolation layer (106), the second electrode layer (104) and the third electrode layer (108) are transparent to a working light emitted by the electricity-to-light conversion layer (102).</p> |
