| 摘要 |
<P>PROBLEM TO BE SOLVED: To control composition or defects of an oxide semiconductor, to increase field effect mobility of a thin film transistor, and to obtain a sufficient on-off ratio while suppressing off-current. <P>SOLUTION: The oxide semiconductor is represented by InMO<SB POS="POST">3</SB>(ZnO)<SB POS="POST">n</SB>, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co and Al and n is a non-integer number greater than or equal to 1 and less than 50, and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M, where M is one or a plurality of elements selected from Fe, Ga, Ni and Al. In addition, the oxide semiconductor has an amorphous structure. In this case, n is preferably a non-integer number greater than or equal to 1 and less than 50, more preferably less than 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
