| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate having a buffer layer structure which is improved in order to grow a semiconductor laminate structure for a nitride semiconductor device. <P>SOLUTION: A substrate having a buffer layer structure for growing a nitride semiconductor layer includes a silicon nitride layer formed on the (111) principal plane of an Si single crystal substrate, an AIN crystal layer deposited on the silicon nitride layer, and a plurality of Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N(1>x>0) crystal layers deposited on the AIN layer. In the plurality of Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N layers, the upper layer has a smaller Al composition ratio x when compared with that of the lower layer, and one of the plurality of Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N layers includes an AIN intermediate layer where crystalline and amorphous are mixed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
