发明名称 |
HYDROSILANE DERIVATIVE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING THIN FILM |
摘要 |
This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1') by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.
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申请公布号 |
US2013123528(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113702723 |
申请日期 |
2011.05.30 |
申请人 |
TADA KEN-ICHI;IWANAGA KOHEI;YAMAMOTO TOSHIKI;MANIWA ATSUSHI;SAGAMI CHEMICAL RESEARCH INSTITUTE;TOSOH CORPORATION |
发明人 |
TADA KEN-ICHI;IWANAGA KOHEI;YAMAMOTO TOSHIKI;MANIWA ATSUSHI |
分类号 |
C07F7/02 |
主分类号 |
C07F7/02 |
代理机构 |
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