发明名称 |
Doping aluminum in tantalum silicide |
摘要 |
Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.
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申请公布号 |
US2013122697(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113296715 |
申请日期 |
2011.11.15 |
申请人 |
LU XINLIANG;GANGULI SESHADRI;CHEN MICHAEL S.;NOORI ATIF;CHEN SHIH CHUNG;MAHAJANI MAITREYEE;CHANG MEI;APPLIED MATERIALS, INC. |
发明人 |
LU XINLIANG;GANGULI SESHADRI;CHEN MICHAEL S.;NOORI ATIF;CHEN SHIH CHUNG;MAHAJANI MAITREYEE;CHANG MEI |
分类号 |
H01L21/28;H01B1/02 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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