| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a pattern in which a pattern having pattern size larger than an exposure limit (a resolution limit) of a current exposure light source can be formed on a surface to be processed, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: A method for forming a pattern comprises: a first resist pattern-forming step for forming a first resist pattern; a coating layer-forming step for forming a coating layer composed of a coating material so as to cover a surface of the first resist pattern; and a second resist pattern-forming step for forming a second resist pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
