| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable wavelength semiconductor laser capable of continuing oscillation while suppressing significant characteristic deterioration. <P>SOLUTION: The variable wavelength semiconductor laser has a structure obtained by repeatedly forming an active waveguide layer and a non-active waveguide layer alternately and periodically on a semiconductor substrate. A diffraction grating is formed over the full length of the active waveguide layer and non-active waveguide layer, and at least one phase shift Ω<SB POS="POST">C</SB>being inserted into the diffraction grating in order to satisfy the phase conditions of the resonator when the bonding face of the active waveguide layer and non-active waveguide layer is formed ideally is provided in the resonator. In a state where the refractive index of the non-active waveguide layer is changed to the maximum by injecting a current, the difference of refractive indices of the non-active waveguide layer and active waveguide layer before current injection is set so that the difference of refractive indices falls in a range from -0.01 to 0. <P>COPYRIGHT: (C)2013,JPO&INPIT |
