| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing graphene on a surface of an insulating substrate from a metal catalyst crystal thin film in a lateral direction. <P>SOLUTION: The metal catalyst crystal thin film 102 is formed so that a part of the upper surface of the insulating crystal substrate 101 is exposed. In a state that the metal catalyst crystal thin film 102 is formed on the insulating crystal substrate 101 so that the surface of the insulating substrate 101 is exposed, hydrocarbon-containing gas 3 is used to perform vapor phase growth to the graphene. <P>COPYRIGHT: (C)2013,JPO&INPIT |
