发明名称 |
ADSORPTION SITE BLOCKING METHOD FOR CO-DOPING ALD FILMS |
摘要 |
A method for doping a dielectric material by pulsing a first dopant precursor, purging the non-adsorbed precursor, pulsing a second precursor, purging the non-adsorbed precursor, and pulsing a oxidant to form an intermixed layer of two (or more) metal oxide dielectric dopant materials. The method may also be used to form a blocking layer between a bulk dielectric layer and a second electrode layer. The method improves the control of the composition and the control of the uniformity of the dopants throughout the thickness of the doped dielectric material.
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申请公布号 |
US2013122678(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113294341 |
申请日期 |
2011.11.11 |
申请人 |
MALHOTRA SANDRA;CHEN HANHONG;DEWEERD WIM;HIROTA TOSHIYUKI;ODE HIROYUKI;ELPIDA MEMORY, INC.;INTERMOLECULAR, INC. |
发明人 |
MALHOTRA SANDRA;CHEN HANHONG;DEWEERD WIM;HIROTA TOSHIYUKI;ODE HIROYUKI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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