MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL AND METHOD FOR WRITING AND READING MRAM CELL BY USING SELF REFERENCE READ OPERATION

摘要

PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) having a magnetic tunnel junction.

SOLUTION: A magnetic tunnel junction 2 consists of a synthetic storage layer 23, a sense layer 21 exhibiting reversible sense magnetization direction 211, and a tunnel barrier layer 22 between the sense layer and the storage layer. A net stray local magnetic field couples the storage layer with the sense layer. The net stray local magnetic field is a stray local magnetic field where the net stray local magnetic field coupled with the sense layer is less than 50 Oersted. A method of writing and reading an MRAM cell is also provided. The disclosed MRAM can be written and read with a lower power consumption when compared with a conventional MRAM.

COPYRIGHT: (C)2013,JPO&INPIT