A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high k phase of a subsequently deposited dielectric layer. The high k dielectric layer comprises a doped material that can be crystallized after a subsequent annealing treatment. A metal oxide second electrode layer is formed above the dielectric layer. The metal oxide second electrode layer has a crystal structure that is compatible with the crystal structure of the dielectric layer. Optionally, a second electrode bulk layer is formed above the metal oxide second electrode layer.
申请公布号
US2013119512(A1)
申请公布日期
2013.05.16
申请号
US201213665524
申请日期
2012.10.31
申请人
INTERMOLECULAR, INC.;ELPIDA MEMORY, INC;ELPIDA MEMORY, INC;INTERMOLECULAR, INC.