| 发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>Provided are a method for manufacturing a semiconductor element that allows an electrode to be connected at a low resistance to a Ga2O3 single crystal, and a semiconductor element that includes an electrode and a Ga2O3 single crystal connected at a low resistance. As one embodiment, a method is provided for manufacturing the semiconductor element that includes a step for performing dry etching on the surface of a Ga2O3 circuit board (11) to form an altered region (12), and a step for forming on the altered region (12) a cathode electrode (14) having an ohmic junction to the altered region (12).</p> |
| 申请公布号 |
WO2013069729(A1) |
申请公布日期 |
2013.05.16 |
| 申请号 |
WO2012JP78985 |
申请日期 |
2012.11.08 |
| 申请人 |
TAMURA CORPORATION;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY |
发明人 |
SASAKI, KOHEI;HIGASHIWAKI, MASATAKA |
| 分类号 |
H01L21/28;H01L21/329;H01L21/338;H01L29/417;H01L29/47;H01L29/812;H01L29/872 |
主分类号 |
H01L21/28 |
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