发明名称 |
Method of Manufacturing a Semiconductor Device |
摘要 |
A method of manufacturing a semiconductor device, the method including: forming a plurality of first trenches extending in one direction in at least a part of a substrate; forming a plurality of first filling layers for filling the plurality of first trenches and having protrusion portions extended from the substrate from the plurality of first trenches; forming spacers on side walls of the protrusion portions of the plurality of first filling layers so that a part of the substrate is exposed between the plurality of first filling layers; and forming a plurality of second trenches extending in parallel to the plurality of first trenches by etching the substrate exposed through the spacers. |
申请公布号 |
US2013122685(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213608831 |
申请日期 |
2012.09.10 |
申请人 |
KIM EUN-JUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EUN-JUNG |
分类号 |
H01L21/762;H01L21/283;H01L21/768 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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