发明名称 |
TEMPERATURE GRADING FOR BAND GAP ENGINEERING OF PHOTOVOLTAIC DEVICES |
摘要 |
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
|
申请公布号 |
US2013118565(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113295511 |
申请日期 |
2011.11.14 |
申请人 |
ABOU-KANDIL AHMED;FOGEL KEITH E.;HONG AUGUSTIN J.;KIM JEEHWAN;SAAD MOHAMED;SADANA DEVENDRA K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOU-KANDIL AHMED;FOGEL KEITH E.;HONG AUGUSTIN J.;KIM JEEHWAN;SAAD MOHAMED;SADANA DEVENDRA K. |
分类号 |
H01L31/105;H01L31/18 |
主分类号 |
H01L31/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|