发明名称 TEMPERATURE GRADING FOR BAND GAP ENGINEERING OF PHOTOVOLTAIC DEVICES
摘要 A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
申请公布号 US2013118565(A1) 申请公布日期 2013.05.16
申请号 US201113295511 申请日期 2011.11.14
申请人 ABOU-KANDIL AHMED;FOGEL KEITH E.;HONG AUGUSTIN J.;KIM JEEHWAN;SAAD MOHAMED;SADANA DEVENDRA K.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ABOU-KANDIL AHMED;FOGEL KEITH E.;HONG AUGUSTIN J.;KIM JEEHWAN;SAAD MOHAMED;SADANA DEVENDRA K.
分类号 H01L31/105;H01L31/18 主分类号 H01L31/105
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