| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method in which the taper angle is less than 90 degrees. <P>SOLUTION: Fluorine and oxygen are introduced, as a reactive etching gas, into a vacuum vessel 1, and induction coupling plasma 7 is generated by supplying a high frequency power to a coil 6. Silicon placed, as an etching member 10, on a substrate electrode 8 is then etched by the plasma, and the etching shape of the silicon is controlled by the frequency of an AC power supplied to the substrate electrode 8 from an AC power supply 11 therefor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
