GROUP III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor electronic device provided on the surface of a semiconductor consisting of AlN and having enhanced transistor characteristics.

SOLUTION: On the surface 21a of a semiconductor consisting of AlN and having a dislocation density of 5×107cm-2or lower, a first epitaxial semiconductor layer 13 is provided coherently. A second epitaxial semiconductor layer 15 is provided on the first epitaxial semiconductor layer 13 so as to form a heterojunction 23a. Since the first epitaxial semiconductor layer 13 is grown coherently on the semiconductor surface 21a, the first epitaxial semiconductor layer 13 is distorted according to the lattice constant of the semiconductor surface 21a and is not relaxed. Transistor characteristics of a group III nitride semiconductor electronic device 11 can be enhanced by the first epitaxial semiconductor layer 13 provided coherently for AlN.

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