| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device having higher output at low cost while achieving the downsizing and improving the sensitivity performance. <P>SOLUTION: A semiconductor device 5 has: a substrate 1; a converter 3 held on the substrate 1 and converting waves from the exterior into electric signals; and an amplifier element 4 held on the substrate 1 and amplifying the electric signals from the converter 3. In the substrate 1, a first through hole 1c, which penetrates through the substrate 1 from a front surface to a rear surface, is formed in a region facing the amplifier element 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
