| 发明名称 |
SOLID-STATE ELECTRONIC DEVICE |
| 摘要 |
<p>One solid-state electronic device of the present invention is provided with an oxide layer which is formed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities). The oxide layer has a crystal phase that has a pyrochlore crystal structure and/or a beta-BiNbO4 crystal structure, and the carbon content in the oxide layer is 1.5 atm% or less.</p> |
| 申请公布号 |
WO2013069471(A1) |
申请公布日期 |
2013.05.16 |
| 申请号 |
WO2012JP77624 |
申请日期 |
2012.10.25 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SHIMODA, TATSUYA;TOKUMITSU, EISUKE;ONOUE, MASATOSHI;MIYASAKO, TAKAAKI |
| 分类号 |
H01G4/33;H01G4/12;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L29/786 |
主分类号 |
H01G4/33 |
| 代理机构 |
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代理人 |
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