发明名称 |
METHOD FOR PRODUCING THIN FILM TRANSISTOR, AND THIN FILM TRANSISTOR AND IMAGE DISPLAY DEVICE |
摘要 |
<p>A method for manufacturing a thin film transistor includes a first process of forming a gate electrode on a substrate; a second process of forming a gate insulation film so as to cover the gate electrode; a third process of forming a source electrode and a drain electrode on the gate insulation film; a fourth process of forming a semiconductor layer connected to the source electrode and the drain electrode; a fifth process of forming a protection film so as to overlap a portion of the source electrode and the drain electrode immediately above the semiconductor layer; and a sixth process of patterning the semiconductor layer using the protection film as a mask.</p> |
申请公布号 |
KR20130050914(A) |
申请公布日期 |
2013.05.16 |
申请号 |
KR20127025465 |
申请日期 |
2011.03.01 |
申请人 |
TOPPAN PRINTING CO., LTD. |
发明人 |
IKEDA NORIAKI;MIYAZAKI CHIHIRO;ITO MANABU |
分类号 |
H01L21/336;G02F1/1368;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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