| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition selectively capable of removing a photoresist and an etching residue from a substrate without exerting a destructive chemical action on metal that might also be exposed to the composition, and to provide a composition exhibiting a minute amount of silicon oxide and in general, a low etching rate on an insulating material. <P>SOLUTION: The composition is suitable for removing a photoresist and an etching residue and comprises: (a) at least about 50 wt.% of a solvent selected from the group consisting of tetrafurfuryl alcohol, diacetone alcohol, 1,4-cyclohexane dimethanol, and alkylene glycol ether; (b) about 0.005 to about 0.8 wt.% of a source of fluorine; (c) up to about 49.9 wt.% of water; and (d) up to about 20 wt.% of a corrosion inhibitor. A method for removing a photoresist and/or an etching residue from a substrate is provided, the method including bringing the substrate into contact with the above composition. <P>COPYRIGHT: (C)2013,JPO&INPIT |
