发明名称 |
THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR DEVICE |
摘要 |
A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film including a channel region which is provided on the gate insulating film; semiconductor films on at least the channel region; an insulating film made of an organic material which is provided over the channel region and above the semiconductor films; a source electrode over at least an end portion of the insulating film; and a drain electrode over at least the other end portion of the insulating film and facing the source electrode. The semiconductor films include at least a first semiconductor film and a second semiconductor film provided on the first semiconductor film. A relationship ECP<EC1 is satisfied where ECP and EC1 denote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.
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申请公布号 |
US2013119391(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201313737275 |
申请日期 |
2013.01.09 |
申请人 |
PANASONIC CORPORATION;PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;PANASONIC CORPORATION |
发明人 |
KANEGAE ARINOBU;KAWASHIMA TAKAHIRO;HAYASHI HIROSHI;KAWACHI GENSHIROU |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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