发明名称 |
Method of Fabricating CIGS By Selenization At High Temperature |
摘要 |
A method for high temperature selenization of Cu-In-Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a Se-containing atmosphere. The Se-containing component of the atmosphere is removed through a rapid gas exchange process and the CIGS film is annealed to influence the Ga distribution throughout the depth of the film.
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申请公布号 |
US2013122642(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201313738735 |
申请日期 |
2013.01.10 |
申请人 |
INTERMOLECULAR, INC.;INTERMOLECULAR, INC. |
发明人 |
LIANG HAIFAN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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