| 摘要 |
<p>A semiconductor electricity conversion structure is provided. The semiconductor electricity conversion structure comprises: a substrate (20); and at least one semiconductor electricity conversion structure (10) formed on the substrate (20), the at least one semiconductor electricity conversion structure (10) comprising: at least one semiconductor electricity-to-light conversion unit (110) for converting an input electric energy into a light energy, and at least one semiconductor light-to-electricity conversion unit (120) for converting the light energy back into an output electric energy, in which a number of the semiconductor electricity-to-light conversion unit (110) is in proportion to a number of the semiconductor light-to-electricity conversion unit (120) to realize an electricity conversion, and an emitting spectrum of the semiconductor electricity-to-light conversion unit (110) and an absorption spectrum of the semiconductor light-to-electricity conversion unit (120) are matched with each other.</p> |
