| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface-emitting semiconductor laser capable of preventing the inhibition of an oxidation reaction of a layer to be formed into a current constriction layer in a step of forming the current constriction layer. <P>SOLUTION: A method for manufacturing a surface-emitting semiconductor laser 100 which is a method for manufacturing a surface-emitting semiconductor laser having a columnar portion 20 including at least a part of a resonator includes the steps of: forming a silicon-containing film on a side face 21 of the columnar portion 20 while forming the columnar portion 20 by etching using gas containing SiCl<SB POS="POST">4</SB>; removing a silicon-containing film 110 by etching using fluorine-based gas; and oxidizing at least one layer out of layers constituting the columnar portion 20 from the side face of the columnar portion 20 to form a current constriction layer 28. <P>COPYRIGHT: (C)2013,JPO&INPIT |
