| 摘要 |
A method for forming a semiconductor structure is provided. First, multiple recesses are formed in a substrate. Second, a precursor mixture is provided to form a non-doped epitaxial layer on the inner surface of the recesses. The precursor mixture includes a silicon precursor, an epitaxial material precursor and a hydrogen-halogen compound. The flow rate ratio of the silicon precursor to the epitaxial material precursor is greater than 1.7. Later, a doped epitaxial layer including Si, the epitaxial material and the dopant is formed and substantially fills up the recess.
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