发明名称 GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME
摘要 To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.
申请公布号 US2013119252(A1) 申请公布日期 2013.05.16
申请号 US201113811392 申请日期 2011.07.13
申请人 KAWANAMI YOSHIMI;MATSUBARA SHINICHI;MORITANI HIRONORI;ARAI NORIAKI;SHICHI HIROYASU;HASHIZUME TOMIHIRO;KAGA HIROYASU;SAHO NORIHIDE;MUTO HIROYUKI;OSE YOICHI 发明人 KAWANAMI YOSHIMI;MATSUBARA SHINICHI;MORITANI HIRONORI;ARAI NORIAKI;SHICHI HIROYASU;HASHIZUME TOMIHIRO;KAGA HIROYASU;SAHO NORIHIDE;MUTO HIROYUKI;OSE YOICHI
分类号 H01J37/26;B23K9/00;H01J1/304 主分类号 H01J37/26
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