发明名称 |
Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy |
摘要 |
Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.
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申请公布号 |
US2013119505(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113294760 |
申请日期 |
2011.11.11 |
申请人 |
HARAME DAVID L.;LIU QIZHI;RASSEL ROBERT M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HARAME DAVID L.;LIU QIZHI;RASSEL ROBERT M. |
分类号 |
H01L29/47;G06F9/45;H01L21/329 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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