| 摘要 |
A method of fabricating a double-gate transistor and a tri-gate transistor on a common substrate, in which, a substrate includes a first fin structure covered with a first mask layer and a second fin structure covered with a second mask layer, the first mask layer is removed, a gate material layer is formed and covers the first fin structure and the second mask layer, the gate material layer is patterned to result in a tri-gate structure covering the first fin structure and a double-gate structure covering the second fin structure and the second mask layer, and a source and a drain are formed in each of these two fin structures each at two sides of the gates.
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