发明名称 PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array.
申请公布号 US2013122429(A1) 申请公布日期 2013.05.16
申请号 US201213721467 申请日期 2012.12.20
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON LIMITED 发明人 KUSHIBIKI MASATO;NISHIMURA EIICHI
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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