SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a semiconductor device wherein a diode region and an IGBT region are formed on a same semiconductor substrate. In the semiconductor device, the diode region is provided with a second conductivity-type cathode layer. A second conductivity-type impurity concentration of the cathode layer has a distribution curve line with at least two peaks, and the second conductivity-type impurity concentration is higher than a first conductivity-type impurity concentration at any depth of the cathode layer.