发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE |
摘要 |
<p>A thin film transistor, a manufacturing method thereof and a display device are provided. The manufacturing method for the thin film transistor comprises the following steps: providing a substrate(1), forming an semiconductor layer on the substrate(1); forming a gate insulating layer; and forming a gate electrode(4),wherein the gate insulating layer comprises the first gate insulating layer(5),the first gate insulating layer(5) is formed by oxidizing a portion of the semiconductor layer, and the other portion part of the semiconductor layer which is not oxidized forms an active layer(3), and, the gate insulating layer is between the gate electrode(4) and the active layer(3) by forming the gate electrode(4).</p> |
申请公布号 |
WO2013067855(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
WO2012CN81614 |
申请日期 |
2012.09.19 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
LI, YANZHAO;WANG, GANG;SUN, LI;GUAN, SHUANG |
分类号 |
H01L21/336;H01L21/28;H01L29/51;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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