| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor relay device capable of entirely reducing the size, the cost and the mounting area of chips. <P>SOLUTION: A p-channel type MOSFET208 (see fig. (a)) (in a charge-discharge circuit) formed on a conventional p-type single crystal silicon island 213 is replaced with an n-channel type MOSFET8 (see fig. (b)) formed on an n-type single crystal silicon island 13. With this, even when the cross sectional area of passage of carriers in the n-type single crystal silicon island 13 is reduced to a half of the cross sectional area of passage of carriers in the p-type single crystal silicon island 213, the identical resistance value is ensured in the passage of carriers. Therefore, by forming the MOSFET8 with a n-channel type in the n-type single crystal silicon island 13, the gate width W3 of the MOSFET8 can be reduced to be smaller than the gate width W1 of the conventional MOSFET208 without increasing the ON-resistance to be larger than that of the conventional MOSFET208. <P>COPYRIGHT: (C)2013,JPO&INPIT |
