| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device having excellent characteristics. <P>SOLUTION: A manufacturing method of a semiconductor device having a MISFET comprises: (a) a step of forming a laminated film of a silicon film and an insulation film CP above a semiconductor substrate; (b) a step of forming a laminate of a gate electrode GE1 and an insulation film CP arranged on the gate electrode by patterning the laminated film; (c) a step of forming a side wall film SW on side walls of the laminate; (d) a step of removing the insulation film CP; and (e) a step of injecting arsenic (As) into a semiconductor substrate on both sides of a composition of the side wall film SW and the gate electrode GE1 and into the gate electrode GE1. According to the above-described manufacturing method, volume expansion, especially lateral expansion of the gate electrode GE1 caused by arsenic (As) ion injection can be reduced and a short circuit between the gate electrode and the contact plug can be reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
