| 摘要 |
<p>A transistor includes a substrate, a source terminal and a drain terminal, each terminal being supported by the substrate, and the source and drain terminal being separated by a portion of the substrate, a layer of semiconductive material deposited so as to cover the portion of the substrate and to connect the source terminal to the drain terminal, a layer of dielectric material deposited so as to cover at least a portion of the layer of semiconductive material, and a layer of electrically conductive material deposited so as to cover at least a portion of the layer of dielectric material. The layer of electrically conductive material providing a gate terminal to which a potential may be applied to control a conductivity of the layer of semiconductive material connecting the source and drain terminals.</p> |
