| 摘要 |
<p>The present invention discloses a slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is chosen one or more from H 2 O 2 , (NH 4 ) 2 S 2 O 8 , KIO 4 , KClO 5 . The abrasive is chosen one or more from SiO 2 , CeO 2 , and Al 2 O 3 .The complexing agent is chosen one or more from amino acid and citric acid. The slurry in the present invention can effectively prevent Co over corrosion and reduce the polishing rate of Co in the polishing process.</p> |
