SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve luminous efficiency by including a reflection structure with high reflectivity and a reflective metal layer. CONSTITUTION: An active layer(102) is formed on an n-type semiconductor layer(101). A first p-type semiconductor layer(103a) is formed on the active layer and includes an uneven structure. A reflective metal layer(104) is formed on a second p-type semiconductor layer.
申请公布号
KR20130049894(A)
申请公布日期
2013.05.15
申请号
KR20110114927
申请日期
2011.11.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, TAE HUN;KIM, GI BUM;SONG, SANG YEOB;KIM, BUM JOON;CHAE, SEUNG WAN;JO, SU HYUN