发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an insulation layer from being damaged by protecting the insulation layer against accumulated charges. CONSTITUTION: A semiconductor device is formed on the upper side of a substrate and includes an insulation layer(110) and a gate electrode(120). A first conductive doping region is formed by injecting a dopant into the substrate. A conductive wire is electrically connected to the gate electrode. A contact plug(130) is formed with a second conductive type.</p> |
申请公布号 |
KR20130049943(A) |
申请公布日期 |
2013.05.15 |
申请号 |
KR20110115012 |
申请日期 |
2011.11.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, MOO JIN;LEE, JEONG YUN |
分类号 |
H01L27/04;H01L21/336;H01L29/78 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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