发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 <p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an insulation layer from being damaged by protecting the insulation layer against accumulated charges. CONSTITUTION: A semiconductor device is formed on the upper side of a substrate and includes an insulation layer(110) and a gate electrode(120). A first conductive doping region is formed by injecting a dopant into the substrate. A conductive wire is electrically connected to the gate electrode. A contact plug(130) is formed with a second conductive type.</p>
申请公布号 KR20130049943(A) 申请公布日期 2013.05.15
申请号 KR20110115012 申请日期 2011.11.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, MOO JIN;LEE, JEONG YUN
分类号 H01L27/04;H01L21/336;H01L29/78 主分类号 H01L27/04
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