发明名称 |
Film deposition apparatus and method |
摘要 |
A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region. |
申请公布号 |
US8440270(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20070521179 |
申请日期 |
2007.11.29 |
申请人 |
MORISAKI EISUKE;KOBAYASHI HIROKATSU;YOSHIKAWA JUN;TOKYO ELECTRON LIMITED |
发明人 |
MORISAKI EISUKE;KOBAYASHI HIROKATSU;YOSHIKAWA JUN |
分类号 |
C23C16/00;C23C16/42;C23C16/46;C23C16/52 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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