发明名称 Film deposition apparatus and method
摘要 A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.
申请公布号 US8440270(B2) 申请公布日期 2013.05.14
申请号 US20070521179 申请日期 2007.11.29
申请人 MORISAKI EISUKE;KOBAYASHI HIROKATSU;YOSHIKAWA JUN;TOKYO ELECTRON LIMITED 发明人 MORISAKI EISUKE;KOBAYASHI HIROKATSU;YOSHIKAWA JUN
分类号 C23C16/00;C23C16/42;C23C16/46;C23C16/52 主分类号 C23C16/00
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