Memory device having memory cells with enhanced low voltage write capability

摘要

A memory device includes a memory array comprising a plurality of memory cells. At least a given one of the memory cells comprises a pair of cross-coupled inverters and associated write assist circuitry. The write assist circuitry comprises first switching circuitry coupled between a supply node of a device of the first inverter and a supply node of the memory cell, and second switching circuitry coupled between a supply node of a device of the second inverter and the supply node of the memory cell. The first and second switching circuitry are separately controlled such that during a write operation of the memory cell the supply node of one of the devices is connected to the supply node of the memory cell while the supply node of the other device is not connected to the supply node of the memory cell but is instead permitted to float.